| CRST073N15N | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):150V;连续漏极电流(Id):160A;功率(Pd):227W;导通电阻(RDS(on)@Vgs,Id):6.2mΩ@10V,60A;阈值电压(Vgs(th)@Id):3V@250uA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):5.416nF@75V;反向传输电容(Crss@Vds):31pF@75V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| CRTT084NE6N | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):68V;连续漏极电流(Id):81A;功率(Pd):111W;导通电阻(RDS(on)@Vgs,Id):8.4mΩ@10V,40A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| SKTT077N07N | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):70V;连续漏极电流(Id):80A;功率(Pd):135W;导通电阻(RDS(on)@Vgs,Id):7.7mΩ@10V,40A;阈值电压(Vgs(th)@Id):3.6V@250uA; | | | 获取价格 |
| CRTD110N03L | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):20A;功率(Pd):40W;导通电阻(RDS(on)@Vgs,Id):11mΩ@10V,12A;阈值电压(Vgs(th)@Id):1.8V@250uA; | | | 获取价格 |
| CS55N06A4 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):55A;功率(Pd):69.5W;导通电阻(RDS(on)@Vgs,Id):13mΩ@10V,20A;阈值电压(Vgs(th)@Id):1.9V@250uA; | | | 获取价格 |
| CRTD045N03L | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):80A;功率(Pd):101W;导通电阻(RDS(on)@Vgs,Id):4.5mΩ@10V,30A;阈值电压(Vgs(th)@Id):2.3V@250uA; | | | 获取价格 |
| CS3N150AKR | Wuxi China Resources Microelectronics Limited | MOSFETs TO247 Vdss=1.5KV Id=3A N-Channel | | | 获取价格 |
| CS25N06B4 | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CS3N150AHR | Wuxi China Resources Microelectronics Limited | CS3N150AHR | | | 获取价格 |
| PC817B | Wuxi China Resources Microelectronics Limited | PC817B | | | 获取价格 |
| CS13N50FA9R | Wuxi China Resources Microelectronics Limited | CS13N50FA9R | | | 获取价格 |
| CRTM030N04L | Wuxi China Resources Microelectronics Limited | Trench N-MOSFET 40V, 2.1mΩ, 80A | | | 获取价格 |
| CRSS052N08N | Wuxi China Resources Microelectronics Limited | TO263-3 | | | 获取价格 |
| CS630A4H | Wuxi China Resources Microelectronics Limited | MOS管 N-Channel VDS=200V VGS=±30V ID=9A RDS(ON)=280mΩ@10V TO252 | | | 获取价格 |
| IPT40Q06-SEH | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT40Q06-SEH - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2508-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2508-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q08-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q08-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q06-TEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q06-TEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2006-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2006-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT16Q08-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT16Q08-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
工商网监