| ASDM540G-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):33A;功率(Pd):70W;导通电阻(RDS(on)@Vgs,Id):31mΩ@10V,12A; | | | 获取价格 |
| ASDM40N100P-T | Ascend Frequency Devices | | | | 获取价格 |
| ASDM40N60KQ-R | Ascend Frequency Devices | ASDM40N60KQ-R | | | 获取价格 |
| ASDM2301ZA/SOT23 | Ascend Frequency Devices | ASDM2301ZA/SOT23 | | | 获取价格 |
| ASPL1117-3.3-DT-R | Ascend Frequency Devices | ASPL1117-3.3-DT-R | | | 获取价格 |
| ASDM3416EZA-R | Ascend Frequency Devices | N型MOS管@@VDS20V,ID7ARDS(on),Typ@VGS=4.5V16mR | | | 获取价格 |
| ASDM7002EZA-R | Ascend Frequency Devices | | | | 获取价格 |
| ASDM20N12ZB-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):12A;功率(Pd):1.14W;导通电阻(RDS(on)@Vgs,Id):11.5mΩ@4.5V,5A;阈值电压(Vgs(th)@Id):950mV@250uA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):1.035nF@20V;反向传输电容(Crss@Vds):150pF@20V;工作温度:+150℃@(Tj); | | | 获取价格 |
| ASDM60N50KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):50A;功率(Pd):62.5W;导通电阻(RDS(on)@Vgs,Id):8.5mΩ@10V,20A;阈值电压(Vgs(th)@Id):2.5V@250uA;栅极电荷(Qg@Vgs):18nC@10V;输入电容(Ciss@Vds):880pF@30V;反向传输电容(Crss@Vds):16pF@30V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| ASDM20N60KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):60A;功率(Pd):60W;导通电阻(RDS(on)@Vgs,Id):5mΩ@4.5V,25A;阈值电压(Vgs(th)@Id):700mV@250uA;栅极电荷(Qg@Vgs):18nC@8V;输入电容(Ciss@Vds):980pF@15V;反向传输电容(Crss@Vds):80pF@15V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| ASDM30N75KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):75A;功率(Pd):75W;导通电阻(RDS(on)@Vgs,Id):4.8mΩ@10V,20A;阈值电压(Vgs(th)@Id):1.6V@250uA;栅极电荷(Qg@Vgs):11.1nC@4.5V;输入电容(Ciss@Vds):1.56nF@25V;反向传输电容(Crss@Vds):178pF@25V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| ASDM100N15KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):15A;功率(Pd):55W;导通电阻(RDS(on)@Vgs,Id):95mΩ@10V,10A;阈值电压(Vgs(th)@Id):1.6V@250uA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):932pF@50V;反向传输电容(Crss@Vds):21pF@50V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| ASDM100R750PKQ-R | Ascend Frequency Devices | 类型:P沟道;漏源电压(Vdss):100V;连续漏极电流(Id):20A;功率(Pd):72W;导通电阻(RDS(on)@Vgs,Id):75mΩ@10V,10A;阈值电压(Vgs(th)@Id):1.8V@250uA;栅极电荷(Qg@Vgs):9.7nC@10V;输入电容(Ciss@Vds):1.051nF@50V;反向传输电容(Crss@Vds):25pF@50V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| ASDM4406S-R | Ascend Frequency Devices | ASDM4406S-R | | | 获取价格 |
| ASDM3401ZB-R | Ascend Frequency Devices | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4.2A;功率(Pd):1.4W;导通电阻(RDS(on)@Vgs,Id):65mΩ@10V,4A;阈值电压(Vgs(th)@Id):1.5V@250uA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):954pF@15V;反向传输电容(Crss@Vds):77pF@15V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| ASDM3415ZA-R | Ascend Frequency Devices | | | | 获取价格 |
| ASDM60P12KQ-R | Ascend Frequency Devices | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):12A;功率(Pd):50W;导通电阻(RDS(on)@Vgs,Id):62mΩ@10V,14A; | | | 获取价格 |
| ASDM60N30KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):30A;功率(Pd):55W;导通电阻(RDS(on)@Vgs,Id):23mΩ@10V,15A;阈值电压(Vgs(th)@Id):1.6V@250uA;栅极电荷(Qg@Vgs):25nC@10V;输入电容(Ciss@Vds):1.562nF@25V;反向传输电容(Crss@Vds):66.8pF@25V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| ASDM40N80KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):80A;功率(Pd):65W;导通电阻(RDS(on)@Vgs,Id):5.5mΩ@4.5V,35A;阈值电压(Vgs(th)@Id):2.5V@250uA;栅极电荷(Qg@Vgs):29nC@10V;输入电容(Ciss@Vds):3.027nF@20V;反向传输电容(Crss@Vds):155pF@20V;工作温度:+150℃@(Tj); | | | 获取价格 |
| ASDM100N34KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):34A;功率(Pd):63W;导通电阻(RDS(on)@Vgs,Id):24mΩ@10V,20A;阈值电压(Vgs(th)@Id):1.5V@250uA;栅极电荷(Qg@Vgs):23nC@10V;输入电容(Ciss@Vds):1.5nF@25V;反向传输电容(Crss@Vds):252pF@25V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
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